N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 25A,RDS(ON) = 40mW @VGS = 4.5V. RDS(ON) = 70mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：472.57 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ■ 30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ @VGS=4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ TO-220 & TO-263 package.

文件：40.33 Kbytes 页数：5 Pages

CET

华瑞

PIEZO BUZZER INDICATOR

FEATURES • through-hole pins • 12 Vdc rating • 3.0 kHz rated frequency

文件：363.14 Kbytes 页数：3 Pages

CUID

N-Channel Enhancement Mode Field Effect Transistor

文件：85.87 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：132.65 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：132.65 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：827.09 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：132.54 Kbytes 页数：4 Pages

CET

华瑞

N-Channel MOSFET uses advanced trench technology

文件：1.68263 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel MOSFET uses advanced trench technology

文件：1.80142 Mbytes 页数：4 Pages

DOINGTER

杜因特