N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

文件：107.09 Kbytes 页数：2 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 6.1A , RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant. RDS(ON) = 45mW @VGS = 2.5V. RDS(ON) = 60mW @VGS = 1.8V.

文件：501.79 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -3.5A, RDS(ON) = 85mΩ @VGS = -4.5V. RDS(ON) = 130mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

文件：131.72 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -4.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

文件：131.58 Kbytes 页数：4 Pages

CET

华瑞

丝印：658；Package：TSOP-6；MOSFET

Features - Simple drive requirement. - Low on-resistance. - Small package outline.

文件：516.13 Kbytes 页数：6 Pages

COMCHIP

典琦

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5A, RDS(ON) = 50mW @VGS = -10V. RDS(ON) = 85mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

文件：542.76 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 6A , RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

文件：132.35 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 6.3A , RDS(ON) = 32mW @VGS = 10V. RDS(ON) = 44mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

文件：501.66 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 62mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ TSOP-6 package. ■ Lead free product is acquired.

文件：131.14 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -4.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 62mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead-free plating ; RoHS compliant.

文件：411.83 Kbytes 页数：4 Pages

CET-MOS

华瑞