N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 6.1A , RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant. RDS(ON) = 45mW @VGS = 2.5V. RDS(ON) = 60mW @VGS = 1.8V.

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CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 4.8A, RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. RDS(ON) = 45mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23-T package. RoHS compliant. RDS(ON) = 60mW @VGS = 1.8V.

文件：911.11 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 4.8A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 60mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：549.63 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 4.8A, RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. RDS(ON) = 45mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant. RDS(ON) = 60mW @VGS = 1.8V.

文件：482.79 Kbytes 页数：5 Pages

CET-MOS

华瑞