CES2310

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,4.8A,RDS(ON)=34mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=60mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2310L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,4.8A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. RDS(ON)=45mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=60mW@VGS=1.8V.

CHM2310PT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT4.8Ampere FEATURE ​​​​​​​*Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplicatio

CJ2310

SOT-23Plastic-EncapsulateMOSFETS

CJ2310

N-ChannelMOSFET

CM2310

T-13/4Bi-PinBase(.125)

T-13/4Bi-PinBase(.125)

CM2310

T-13/4Bi-PinBase(.125)

CPB2310

PiezoBuzzer(DC)

CRO2310A

LOWCOST-HIGHPERFORMANCEVOLTAGECONTROLLEDOSCILLATOR

CRO2310A-LF

Voltage-ControlledOscillatorSurfaceMountModule