N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 4.8A, RDS(ON) = 34mW @VGS = 10V. RDS(ON) = 40mW @VGS = 4.5V. RDS(ON) = 45mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-23 package. RoHS compliant. RDS(ON) = 60mW @VGS = 1.8V.

文件：482.79 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 4.8 Ampere FEATURE ​​​​​​​* Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applicatio

文件：352.92 Kbytes 页数：3 Pages

CHENMKO

力勤

SOT-23 Plastic-Encapsulate MOSFETS

文件：1.00264 Mbytes 页数：3 Pages

ZPSEMIZP Semiconductor

至尚臻品

N-Channel MOSFET

文件：1.19603 Mbytes 页数：5 Pages

JIANGSU

长电科技