Dual Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 3.5A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. ■ -20V, -2.5A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 145mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capa

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 4A, RDS(ON) = 45mW @VGS = 4.5V. FEATURES RDS(ON) = 55mW @VGS = 2.5V. -20V, -2.8A, RDS(ON) = 90mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：560.21 Kbytes 页数：7 Pages

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Dual Enhancement Mode Field Effect Transistor (P Channel)

FEATURES -20V, -3.0A, RDS(ON) = 70mW @VGS = -4.5V. RDS(ON) = 90mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead-free plating ; RoHS compliant. RDS(ON) = 120mW @VGS = -1.8V.

文件：523.34 Kbytes 页数：4 Pages

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Dual Enhancement Mode Field Effect Transistor (P Channel)

FEATURES -20V, -3.3A, RDS(ON) = 65mW @VGS = -4.5V. RDS(ON) = 100mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant. RDS(ON) = 150mW @VGS = -1.8V.

文件：466.41 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 5.5A, RDS(ON) = 42mΩ @VGS = 10V. RDS(ON) = 59mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

文件：132.56 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 5.2A , RDS(ON) TYP = 25 mW @VGS = 4.5V. RDS(ON) TYP = 30mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead free product is acquired. Halogen free.

文件：664.05 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

文件：308.1 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

文件：345.81 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

文件：430.39 Kbytes 页数：4 Pages

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P Channel MOSFET

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