P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ TSOP-6 package. ■ Lead-free plating ; RoHS compliant.

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -4.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 75mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

文件：679.22 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -5.2A , RDS(ON) = 48mW @VGS = -4.5V. RDS(ON) = 60mW @VGS = -2.5V. RDS(ON) = 78mW @VGS = -1.8V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

文件：679.46 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -5.2A , RDS(ON) = 48mW @VGS = -4.5V. RDS(ON) = 60mW @VGS = -2.5V. RDS(ON) = 78mW @VGS = -1.8V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

文件：434.14 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -5.5A, RDS(ON) = 42mW @VGS = -4.5V. RDS(ON) = 55mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant. RDS(ON) = 75mW @VGS = -1.8V.

文件：541.08 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -150V, -1.45A, RDS(ON) = 720mW @VGS = -10V. RDS(ON) = 750mW @VGS = -6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

文件：601.93 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 110V, 2.3A, RDS(ON) = 360mW @VGS = 10V. RDS(ON) = 420mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

文件：372.6 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 2.2A, RDS(ON) = 370mW @VGS = 10V. RDS(ON) = 420mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

文件：372.35 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 4.3A , RDS(ON) = 60mW @VGS = 10V. RDS(ON) = 74mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

文件：423.02 Kbytes 页数：5 Pages

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Dual Enhancement Mode Field Effect Transistor (N Channel)

20V, 4A, RDS(ON) = 45mW @VGS = 4.5V. FEATURES RDS(ON) = 55mW @VGS = 2.5V. RDS(ON) = 110mW @VGS = 1.8V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：471.84 Kbytes 页数：5 Pages

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