P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -5.2A , RDS(ON) = 48mW @VGS = -4.5V. RDS(ON) = 60mW @VGS = -2.5V. RDS(ON) = 78mW @VGS = -1.8V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

文件：434.14 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -5.2A , RDS(ON) = 48mW @VGS = -4.5V. RDS(ON) = 60mW @VGS = -2.5V. RDS(ON) = 78mW @VGS = -1.8V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

文件：679.46 Kbytes 页数：4 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V, -5.5A, RDS(ON) = 42mW @VGS = -4.5V. RDS(ON) = 55mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant. RDS(ON) = 75mW @VGS = -1.8V.

文件：541.08 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞