N-Channel Enhancement Mode Field Effect Transistor

FEATURES 110V, 2.3A, RDS(ON) = 360mW @VGS = 10V. RDS(ON) = 420mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. RoHS compliant.

文件：372.6 Kbytes 页数：5 Pages

CET-MOS

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N Channel MOSFET

CET

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PLLatinum TM Fractional N RF / Integer N IF Dual Low Power Frequency Synthesizer

文件：408.05 Kbytes 页数：21 Pages

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LOW POWER SWITCHING REGULATOR

文件：406.47 Kbytes 页数：16 Pages

NJRC

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Silicon Complementary Transistors Darlington Power Amp, Switch

Features: • High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A • Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A

文件：24.3 Kbytes 页数：2 Pages

NTE