N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 5.2A , RDS(ON) TYP = 25 mW @VGS = 4.5V. RDS(ON) TYP = 30mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead free product is acquired. Halogen free.

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CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

20.2 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER

The RF Line High Output Power Doubler 860 MHz CATV Amplifier • Specified for 77, 110 and 128–Channel Performance • Broadband Power Gain - @ f = 40–860 MHz Gp = 20.2 dB (Typ) • Broadband Noise Figure NF = 7 dB (Typ) @ 860 MHz • All Gold Metallization • 7 GHz fT Ion–Implanted Transisto

文件：55.3 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉

6-Pin DIP Optoisolators High Voltage Transistor Output(400 Volts)

The MOC8204, MOC8205 and MOC8206 devices consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransis tor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and sol

文件：295.71 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

NICAM QPSK DEMODULATOR

DESCRIPTION The TDA8205 is essentially divided into two signal processing sections. The first section handles all the NICAM signal acquisition, the QPSK demodulator and clock and data recovery circuits. The key point to note about this section is the dual frequency synthesiser. By use of only o

文件：163 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体