6-Pin DIP Optoisolators High Voltage Transistor Output(400 Volts)

The MOC8204, MOC8205 and MOC8206 devices consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransis tor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and sol

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MOTOROLA

摩托罗拉

20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET

文件：627.94 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体

20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET

文件：675.87 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体

Dual N-Channel MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：436.25 Kbytes 页数：8 Pages

VBSEMI

微碧半导体