P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -3.5A, RDS(ON) = 85mΩ @VGS = -4.5V. RDS(ON) = 130mΩ @VGS = -2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ TSOP-6 package.

文件：131.72 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

T-1 3/4 Bi-Pin Base (.125)

T-1 3/4 Bi-Pin Base (.125)

文件：217.57 Kbytes 页数：1 Pages

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文件：184.57 Kbytes 页数：6 Pages

CHINASEMI

2.3 Inch Single Digit Alphanumeric Display

文件：187.52 Kbytes 页数：6 Pages

CHINASEMI