Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -3.6A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TSSOP-8 for Surface Mount Package.

文件：361.16 Kbytes 页数：4 Pages

CET

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Dual P-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

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