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CEB85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,90A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEB85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,90A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,80A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CED85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,90A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-263&TO-220package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,90A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-263&TO-220package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 25V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU85A3

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■25V,80A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEU85A3

N-ChannelEnhancementModeFieldEffectTransistor

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

供应商型号品牌批号封装库存备注价格
CET/華瑞
21+
TO-251
9852
只做原装正品现货!或订货假一赔十!
询价
CET/華瑞
23+
TO-251
10000
公司只做原装正品
询价
C
TO-252
22+
6000
十年配单,只做原装
询价
C
23+
TO-252
6000
原装正品,支持实单
询价
apec
2023+
TO-251
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
CET/華瑞
2022+
TO-251
30000
进口原装现货供应,原装 假一罚十
询价
VBSEMI
19+
TO-252
29600
绝对原装现货,价格优势!
询价
CET
23+
TO251
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
CET
02+
TO251
2360
询价
CET
23+
TO251
8000
全新原装现货,欢迎来电咨询
询价
更多CED85A3MOS(场效应管)供应商 更新时间2024-6-22 17:10:00