N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：121.59 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES • 30V, 60A, RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15mΩ @VGS=4.5V. • Super high dense cell design for extremely low RDS(ON). • High power and curent handing capability. • TO-220 & TO-263 package.

文件：513.64 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 55A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：121.59 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 55 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：204.28 Kbytes 页数：2 Pages

CHENMKO

力勤