CEC6072

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,54A,RDS(ON)=9mW@VGS=10V. RDS(ON)=13mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CEC6188

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,20A,RDS(ON)=25mW@VGS=10V. RDS(ON)=32mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CEC6P61

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-11A,RDS(ON)=125mW@VGS=-10V. RDS(ON)=170mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CEC6P91

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-12.5A,RDS(ON)=100mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CEC8218

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,6.5A,RDS(ON)=23mΩ@VGS=4.5V. RDS(ON)=34mΩ@VGS=2.5V. ■SuperHighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.

CEC8218

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,7A,RDS(ON)=20mW@VGS=4.5V. RDS(ON)=28mW@VGS=2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. RDS(ON)=48mW@VGS=1.8V.

CEC8958A

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V,21A,RDS(ON)=26mW@VGS=10V. RDS(ON)=45mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. -30V,-16A,RDS(ON)=46mW@VGS=-10V. RDS(ON)=77mW@VGS=-4.5V.

CECC30202-004

Wet Tantalum Capacitors with Glass to Tantalum Hermetic Seal, Sintered Anode TANTALEX Capacitors

FEATURES •Hermeticglasstotantalumseal •HighCVperunitvolume •Extremelylowleakagecurrent •Widetemperaturerange:-55to+175°C •Improvedreliabilitythroughtheuseofaglass-to-tantalum   truehermeticanodesealistheprimefeatureofthe738D   andCT9sinteredanod

CECCNC

Low and Medium Voltage Chips Capacitors

FEATURES •Casesizes:0402-3040 •NPO,BX,2C1,X7Rdielectrics •Capacitancerange:1pFto12μF •Ag/Pd/Pt,Nibarrier,epoxyterminationsavailable •RoHSandNonRoHScompliantcapacitorsavailable •ScreeninginaccordancewithESAspecificationsavailable

CECF75N55S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 550V,75A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SOT-227package. RoHScompliant.