P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -37A, RDS(ON) = 10mW @VGS = -10V. RDS(ON) = 15mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：413.17 Kbytes 页数：5 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 40A, RDS(ON) = 10.2 mW @VGS = 10V. RDS(ON) = 16 mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：666.56 Kbytes 页数：5 Pages

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High Capacitance Stacked Capacitors

FEATURES • Multilayer chips ceramic capacitors • NPO dielectric • Capacitance range: 10nF to 6.8 μF • Voltage range: 63 VDC to 500 VDC

文件：2.21035 Mbytes 页数：18 Pages

EXXELIA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 54A, RDS(ON) = 9mW @VGS = 10V. RDS(ON) = 13mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：650.93 Kbytes 页数：5 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 20A, RDS(ON) = 25mW @VGS = 10V. RDS(ON) = 32mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：393.43 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -11A, RDS(ON) = 125mW @VGS = -10V. RDS(ON) = 170mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：813.22 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -12.5A, RDS(ON) = 100mW @VGS = -10V. RDS(ON) = 120mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：453.49 Kbytes 页数：5 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V, 7A, RDS(ON) = 20mW @VGS = 4.5V. RDS(ON) = 28mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. RDS(ON) = 48mW @VGS = 1.8V.

文件：758.46 Kbytes 页数：4 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：438.84 Kbytes 页数：4 Pages

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V, 21A, RDS(ON) = 26mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. -30V, -16A, RDS(ON) = 46mW @VGS = -10V. RDS(ON) = 77mW @VGS = -4.5V.

文件：951.6 Kbytes 页数：7 Pages

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