Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V, 21A, RDS(ON) = 26mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. -30V, -16A, RDS(ON) = 46mW @VGS = -10V. RDS(ON) = 77mW @VGS = -4.5V.

文件：951.6 Kbytes 页数：7 Pages

CET-MOS

华瑞

Dual N & P MOSFET

CET

华瑞

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ● 30V, 5.3A, RDS(ON) = 35m Ω @ VGS = 10V. RDS(ON) = 50m Ω @ VGS = 4.5V. -30V, -4.0A, RDS(ON) = 65m Ω @ VGS = -10V. RDS(ON) = 100m Ω @ VGS = -4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handin

文件：835.36 Kbytes 页数：9 Pages

CET

华瑞

P-Chanel and N-Channel MOSFET use advanced trench technology

文件：2.91216 Mbytes 页数：8 Pages

DOINGTER

杜因特

Dual Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 6.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. ■ -30V, -4.8A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabili

文件：427.18 Kbytes 页数：7 Pages

CET

华瑞