Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors

EIA Class 1 Temperature Compensating Capacitors EIA Class 1 temperature compensating capacitors are ideal for timing and oscillating circuits. They are conformally coated with one inch minimum radial leads. EIA Class 1 Temperature Compensating Capacitors Highlights • Small size • Conformally c

文件：177.95 Kbytes 页数：1 Pages

CDE

Disc Ceramic Capacitors EIA Class 1 Temperature Compensating Capacitors

EIA Class 1 Temperature Compensating Capacitors EIA Class 1 temperature compensating capacitors are ideal for timing and oscillating circuits. They are conformally coated with one inch minimum radial leads. EIA Class 1 Temperature Compensating Capacitors Highlights • Small size • Conformally c

文件：177.95 Kbytes 页数：1 Pages

CDE

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 25V, 44A, RDS(ON) = 8 mW @VGS = 10V. RDS(ON) = 13 mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：770.06 Kbytes 页数：5 Pages

CET-MOS

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 4.8A, RDS(ON) = 38mW @VGS = 4.5V. FEATURES RDS(ON) = 55mW @VGS = 2.5V. -20V, -3.0A, RDS(ON) = 100mW @VGS = -4.5V. RDS(ON) = 145mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. S2

文件：680.64 Kbytes 页数：7 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 48A, RDS(ON) = 6.7mW @VGS = 10V. RDS(ON) = 8.7mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：462.84 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -36A, RDS(ON) = 12mW @VGS = -10V. RDS(ON) = 16mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：440.47 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -30A, RDS(ON) = 17mW @VGS = -10V. RDS(ON) = 26mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：748.28 Kbytes 页数：5 Pages

CET-MOS

华瑞

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -17A, RDS(ON) = 25mW @VGS = -10V. RDS(ON) = 32mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：517.62 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 46A, RDS(ON) = 7.2mW @VGS = 10V. RDS(ON) = 10mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：586.01 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 17A, RDS(ON) = 5.0mW @VGS = 10V. RDS(ON) = 7.2mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：680.2 Kbytes 页数：4 Pages

CET-MOS

华瑞