Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 4.8A, RDS(ON) = 38mW @VGS = 4.5V. FEATURES RDS(ON) = 55mW @VGS = 2.5V. -20V, -3.0A, RDS(ON) = 100mW @VGS = -4.5V. RDS(ON) = 145mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. S2

文件：680.64 Kbytes 页数：7 Pages

CET-MOS

华瑞

Dual N & P MOSFET

CET

华瑞

Dual Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 3.5A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. ■ -20V, -2.5A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 145mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capa

文件：572.07 Kbytes 页数：7 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 4A, RDS(ON) = 45mW @VGS = 4.5V. FEATURES RDS(ON) = 55mW @VGS = 2.5V. -20V, -2.8A, RDS(ON) = 90mW @VGS = -4.5V. RDS(ON) = 120mW @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：560.21 Kbytes 页数：7 Pages

CET-MOS

华瑞

P-Ch 20V Fast Switching MOSFETs

Description The FKN2609 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN2609 meets the RoHS and Green Product requirement with full function reliability approved.

文件：580.45 Kbytes 页数：4 Pages

FETEK

台湾东沅