N-Channel Enhancement Mode Field Effect Transistor

FEATURES 25V, 44A, RDS(ON) = 8 mW @VGS = 10V. RDS(ON) = 13 mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：770.06 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

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2-INPUT 1-OUTPUT VIDEO SWITCH???

文件：193.68 Kbytes 页数：4 Pages

NJRC

日本无线

2-INPUT 1-OUTPUT VIDEO SWITCH???

文件：193.68 Kbytes 页数：4 Pages

NJRC

日本无线

AM TUNER FOR ELECTRONIC TUNING CAR RADIOS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：212.28 Kbytes 页数：36 Pages

NEC

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