P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -36A, RDS(ON) = 12mW @VGS = -10V. RDS(ON) = 16mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：440.47 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -12A, RDS(ON) = 12mW @VGS = -10V. RDS(ON) = 16mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：388.77 Kbytes 页数：5 Pages

CET-MOS

华瑞

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height : 0.9mm). • High allowable po

文件：54.66 Kbytes 页数：5 Pages

SANYO

三洋

Bipolar Transistor (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single CPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation • Halogen free compliance Applic

文件：634.46 Kbytes 页数：7 Pages

ONSEMI

安森美半导体