P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -37A, RDS(ON) = 10mW @VGS = -10V. RDS(ON) = 15mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：413.17 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -37A, RDS(ON) = 10mW @VGS = -10V. RDS(ON) = 15mW @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：860.47 Kbytes 页数：6 Pages

CET-MOS

华瑞

Nch 100V 80A Power MOSFET

Features 1) Low on - resistance 2) High Power Package(TO-252) 3) Pb-free plating ; RoHS compliant 4) Halogen free Application Switching

文件：2.9184 Mbytes 页数：13 Pages

ROHM

罗姆

Nch 100V 80A Power MOSFET

Features 1) Low on - resistance 2) High power small mold package (TO220AB) 3) Pb-free plating ; RoHS compliant 4) 100 UIS tested Application Switching

文件：2.95275 Mbytes 页数：13 Pages

ROHM

罗姆