N-Channel Logic Level Enhancement Mode Field Effect Transistor

30V, 65A, RDS(ON) = 8mΩ @VGS=10V. RDS(ON) = 12mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON) High power and current handing capability. TO-220 & TO-263 package.

文件：515.73 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

30V, 65A, RDS(ON) = 8mΩ @VGS=10V. RDS(ON) = 12mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON) High power and current handing capability. TO-220 & TO-263 package.

文件：515.73 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Lead free product is acquired. ​​​​​​​● TO-220 & TO-263 package.

文件：516.96 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ​​​​​​​● TO-220 & TO-263 package.

文件：528.71 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：382.5 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES\n● 30V, 40A,RDS(ON) = 17mW @VGS = 10V.\n         RDS(ON) = 30mW @VGS = 4.5V.\n● Super high dense cell design for extremely low RDS(ON).\n● High power and current handing capability.\n● TO-220 & TO-263 package.\n● Lead free product is acquired. ● 30V, 40A,RDS(ON) = 17mW @VGS = 10V.\n         RDS(ON) = 30mW @VGS = 4.5V.\n● Super high dense cell design for extremely low RDS(ON).\n● High power and current handing capability.\n● TO-220 & TO-263 package.\n● Lead free product is acquired.;

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

CET

华瑞

N-Channel Logic Level Enhancement Mode Field Effect Transistor

CET

华瑞