| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 215A, RDS(ON) = 2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 2.3 mW @VGS = 9V. RoHS compliant. 文件：447.17 Kbytes 页数：5 Pages | CET-MOS 华瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 200A, RDS(ON) = 2.3 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) = 2.5 mW @VGS = 9V. RoHS compliant. 文件：448.77 Kbytes 页数：5 Pages | CET-MOS 华瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：647.15 Kbytes 页数：5 Pages | CET-MOS 华瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：426.66 Kbytes 页数：5 Pages | CET-MOS 华瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 256A, TO-263 RDS(ON) typ = 1.8mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. TO-220 RDS(ON) typ = 2.0mW @VGS = 10V Battery protection,UPS. Applications 文件：423.74 Kbytes 页数：5 Pages | CET-MOS 华瑞 | CET-MOS | ||
PIEZOELECTRIC DIAPHRAGM FEATURES • piezo element with wire leads • 30 Vp-p max operating voltage • 4,600 Hz rated frequency 文件：237.48 Kbytes 页数：3 Pages | CUID | CUID | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -90A, RDS(ON) = 5.8mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 9.1mW @VGS = -4.5V. 文件：443.6 Kbytes 页数：5 Pages | CET-MOS 华瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 105A,RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 8mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package 文件：413.92 Kbytes 页数：4 Pages | CET 华瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 105A ,RDS(ON) = 6.0mW @VGS = 10V. RDS(ON) = 7.5mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. 文件：594.18 Kbytes 页数：5 Pages | CET-MOS 华瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 72A ,RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. 文件：784.4 Kbytes 页数：4 Pages | CET 华瑞 | CET |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
视频输出 （Vid）
- 封装形式：
直插封装
- 极限工作电压：
160V
- 最大电流允许值：
0.1A
- 最大工作频率：
95MHZ
- 引脚数：
3
- 可代换的型号：
BF257,BF258,BF259,BF336,BF657,BFT57,BFT58,BFT59,2N5059,3DG180K,
- 最大耗散功率：
0.625W
- 放大倍数：
- 图片代号：
A-23
- vtest：
160
- htest：
95000000
- atest：
0.1
- wtest：
0.625
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HGF |
23+ |
TO-92 |
7600 |
专注配单,只做原装进口现货 |
询价 | ||
HGF |
2026+ |
TO-92 |
50000 |
原装正品,假一罚十! |
询价 | ||
Infineon/英飞凌 |
24+ |
SOT143 |
8200 |
公司现货库存,支持实单 |
询价 | ||
23+ |
2482 |
询价 | |||||
JXK/杰信科 |
23+ |
TO-92 |
1999998 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
BRIGHT |
24+ |
TSOP |
6200 |
询价 | |||
BRIGHT |
06+ |
TSOP |
1000 |
全新原装 绝对有货 |
询价 | ||
BRIGHT |
24+ |
N/A |
13523 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
BRIGHT |
2025+ |
TSOP |
3715 |
全新原厂原装产品、公司现货销售 |
询价 | ||
ROHM/罗姆 |
22+ |
SOT23-5 |
8000 |
原装正品支持实单 |
询价 |
