首页 >BF298P>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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BQ298xxVoltage,Current,TemperatureProtectorswithanIntegratedHigh-SideNFETDriverforFast/FlashChargingSingle-CellLi-IonandLi-PolymerBatteries 1Features •Voltageprotection: –Overvoltage(OV):±10mV –Undervoltage(UV):±20mV •Currentprotection: –Overcurrentincharge(OCC):±1mV –Overcurrentindischarge(OCD):±1mV –Shortcircuitindischarge(SCD):±5mV •Temperatureprotection: –Overtemperature(OT) •Additionalfe | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
BQ298xyzVoltage,Current,TemperatureProtectorswithanIntegratedHigh-SideNFETDriverforFast/FlashChargingSingle-CellLi-IonandLi-PolymerBatteries | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
BQ298xyzVoltage,Current,TemperatureProtectorswithanIntegratedHigh-SideNFETDriverforFast/FlashChargingSingle-CellLi-IonandLi-PolymerBatteries | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
BQ298xyzVoltage,Current,TemperatureProtectorswithanIntegratedHigh-SideNFETDriverforFast/FlashChargingSingle-CellLi-IonandLi-PolymerBatteries 1Features •Voltageprotection: –Overvoltage(OV):±10mV –Undervoltage(UV):±20mV •Currentprotection: –Overcurrentincharge(OCC):±1mV –Overcurrentindischarge(OCD):±1mV –Shortcircuitindischarge(SCD):±5mV •Temperatureprotection: –Overtemperature(OT) •Addition | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
BQ298xyzVoltage,Current,TemperatureProtectorswithanIntegratedHigh-SideNFETDriverforFast/FlashChargingSingle-CellLi-IonandLi-PolymerBatteries 1Features •Voltageprotection: –Overvoltage(OV):±10mV –Undervoltage(UV):±20mV •Currentprotection: –Overcurrentincharge(OCC):±1mV –Overcurrentindischarge(OCD):±1mV –Shortcircuitindischarge(SCD):±5mV •Temperatureprotection: –Overtemperature(OT) •Addition | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
SIPMOSSmall-SignalTransistor SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •Avalancherated •VGS(th)=2.1...4.0V •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101 •HalogenfreeaccordingtoIEC61249221 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeAvalancherated) SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •Avalancherated •VGS(th)=2.1...4.0V | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
SIPMOSSmall-SignalTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNTRANSISTORPOWERMODULE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
NPNTRANSISTORPOWERMODULE NPNTRANSISTORPOWERMODULE ■HIGHCURRENTPOWERBIPOLARMODULE ■VERYLOWRthJUNCTIONCASE ■SPECIFIEDACCIDENTALOVERLOADAREAS ■INSULATEDCASE(2500VRMS) ■EASYTOMOUNT ■LOWINTERNALPARASITICINDUCTANCE INDUSTRIALAPPLICATIONS: ■MOTORCONTROL ■SMPS&UPS ■WELDINGEQUIPMEN | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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