手机指纹芯片

Betterlife

贝特莱电子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：220.77 Kbytes 页数：9 Pages

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

文件：347.26 Kbytes 页数：2 Pages

ISC

无锡固电

MAGNETICS FOR RF, POWER,FILTER AND DATA APPLICATIONS

文件：8.35916 Mbytes 页数：60 Pages

COILCRAFT