| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：529.61 Kbytes 页数：5 Pages | CET-MOS 华瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Fast reverse recovery time. Drive circuits can be simple. 文件：400.95 Kbytes 页数：5 Pages | CET-MOS 华瑞 | CET-MOS | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -14A, RDS(ON) =125mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =175mW @VGS = -4.5V. Lead free product is acquired. 文件：743.03 Kbytes 页数：4 Pages | CET-MOS 华瑞 | CET-MOS | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -60V, -15A, RDS(ON) =105mΩ @VGS = -10V. RDS(ON) =150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. 文件：103.82 Kbytes 页数：4 Pages | CET 华瑞 | CET | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -20A, RDS(ON) =130mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. 文件：642.53 Kbytes 页数：4 Pages | CET-MOS 华瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 25A,RDS(ON) = 40mW @VGS = 4.5V. RDS(ON) = 70mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. 文件：472.57 Kbytes 页数：4 Pages | CET-MOS 华瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 20V, 25A,RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. 文件：101.26 Kbytes 页数：4 Pages | CET 华瑞 | CET | ||
N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES ■ 30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ @VGS=4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handling capability. ■ TO-220 & TO-263 package. 文件：40.33 Kbytes 页数：5 Pages | CET 华瑞 | CET | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 21.8A, RDS(ON) = 50mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant. RDS(ON) = 60mW @VGS = 5V. 文件：376.53 Kbytes 页数：4 Pages | CET-MOS 华瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：498.82 Kbytes 页数：5 Pages | CET-MOS 华瑞 | CET-MOS |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
视频输出 （Vid）
- 封装形式：
直插封装
- 极限工作电压：
160V
- 最大电流允许值：
0.1A
- 最大工作频率：
95MHZ
- 引脚数：
3
- 可代换的型号：
BF257,BF258,BF259,BF336,BF657,BFT57,BFT58,BFT59,2N5059,3DG180K,
- 最大耗散功率：
0.625W
- 放大倍数：
- 图片代号：
A-23
- vtest：
160
- htest：
95000000
- atest：
0.1
- wtest：
0.625
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HGF |
23+ |
TO-92 |
7600 |
专注配单,只做原装进口现货 |
询价 | ||
HGF |
2026+ |
TO-92 |
50000 |
原装正品,假一罚十! |
询价 | ||
Infineon/英飞凌 |
24+ |
SOT143 |
8200 |
公司现货库存,支持实单 |
询价 | ||
23+ |
2482 |
询价 | |||||
JXK/杰信科 |
23+ |
TO-92 |
1999998 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
BRIGHT |
24+ |
TSOP |
6200 |
询价 | |||
BRIGHT |
06+ |
TSOP |
1000 |
全新原装 绝对有货 |
询价 | ||
BRIGHT |
24+ |
N/A |
13523 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
BRIGHT |
2025+ |
TSOP |
3715 |
全新原厂原装产品、公司现货销售 |
询价 | ||
ROHM/罗姆 |
22+ |
SOT23-5 |
8000 |
原装正品支持实单 |
询价 |
