N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

文件：430.82 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -47A, RDS(ON) =20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =32mW @VGS = -4.5V. Lead free product is acquired.

文件：900.88 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：104.25 Kbytes 页数：4 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -55V, -50A, RDS(ON) = 23mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 28mW @VGS = 4.5V.

文件：503.67 Kbytes 页数：4 Pages

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华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

文件：683.38 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V. RDS(ON) =28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：103.92 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 36A, RDS(ON) = 48mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：101.68 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 36A, RDS(ON) = 50mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. RDS(ON) = 53mW @VGS = 5V.

文件：633.43 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 36A, RDS(ON) = 53mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

文件：585.01 Kbytes 页数：4 Pages

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华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 36A, RDS(ON) = 53mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：412.7 Kbytes 页数：4 Pages

CET

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