丝印：C6；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：C6；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：C6；Package：TSSOP5；15-stage divider and oscillator

1. General description 74AHC1G4215 is a 15-stage divider and oscillator. It consists of a chain of 15 flip-flops. Each flip-flop divides the frequency of the previous flip-flop by two, consequently the 74AHC1G4215 counts up to 215 = 32768. The single inverting stage (X1 to X2) functions as a cr

文件：207.73 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

丝印：C6；Package：TSSOP5；15-stage divider and oscillator

1. General description 74AHC1G4215-Q100 is a 15-stage divider and oscillator. It consists of a chain of 15 flip-flops. Each flip-flop divides the frequency of the previous flip-flop by two, consequently the 74AHC1G4215-Q100 counts up to 215 = 32768. The single inverting stage (X1 to X2) functio

文件：207.36 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

丝印：C6；Package：SC-70-5；300mA, HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Features - Excellent Ripple Rejection: 70dB Typical (1.8V Version) - Low Dropout Voltage: 65mV (IOUT=100mA, 3.3V Version) - Low Standby Current: 0.01μA Typical - Low Quiescent Current: 60μA Typical - Extremely Low Noise: 50μVrms Typical - Maximum Output Current: 300mA (Min.) - High Output V

文件：676.08 Kbytes 页数：25 Pages

DIODES

美台半导体

丝印：C6；Package：SOT1061D；45 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili

文件：261.329 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

丝印：C6；Package：DFN2020D-3；45 V/60 V/80 V, 1 A PNP medium power transistors

General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC

文件：903.25 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：C6；Package：DFN2020D-3；45 V, 1 A PNP medium power transistors

1. General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa

文件：263.77 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

丝印：C6；Package：SOT143B；PNP general-purpose double transistor

Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V and 6 V) * AEC-Q101 qualified * Small SMD plastic package

文件：953.09 Kbytes 页数：12 Pages

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安世安世半导体(中国)有限公司

丝印：C6；Package：SOT89；45 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

文件：238.59 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司