丝印：C52；Package：SOT-23；Dual, 700MHz, Voltage-Feedback OPERATIONAL AMPLIFIER

FEATURES · WIDEBAND BUFFER: 700MHz, G = +1 · WIDEBAND LINE DRIVER: 200MHz, G = +2 · HIGH OUTPUT CURRENT: 140mA · LOW SUPPLY CURRENT: 5.5mA/Ch · ULTRA-SMALL PACKAGE: SOT23-8 · LOW dG/df: 0.05%/0.03° · HIGH SLEW RATE: 335V/msec · SUPPLY VOLTAGE: ±3V to ±6V APPLICATIONS · A/D DRIVERS

文件：608.8 Kbytes 页数：24 Pages

TI

德州仪器

丝印：C52；Package：SOT-23；Dual, 700MHz, Voltage-Feedback OPERATIONAL AMPLIFIER

FEATURES · WIDEBAND BUFFER: 700MHz, G = +1 · WIDEBAND LINE DRIVER: 200MHz, G = +2 · HIGH OUTPUT CURRENT: 140mA · LOW SUPPLY CURRENT: 5.5mA/Ch · ULTRA-SMALL PACKAGE: SOT23-8 · LOW dG/df: 0.05%/0.03° · HIGH SLEW RATE: 335V/msec · SUPPLY VOLTAGE: ±3V to ±6V APPLICATIONS · A/D DRIVERS

文件：608.8 Kbytes 页数：24 Pages

TI

德州仪器

丝印：C52；Package：SOT-23；Dual, 700MHz, Voltage-Feedback OPERATIONAL AMPLIFIER

FEATURES · WIDEBAND BUFFER: 700MHz, G = +1 · WIDEBAND LINE DRIVER: 200MHz, G = +2 · HIGH OUTPUT CURRENT: 140mA · LOW SUPPLY CURRENT: 5.5mA/Ch · ULTRA-SMALL PACKAGE: SOT23-8 · LOW dG/df: 0.05%/0.03° · HIGH SLEW RATE: 335V/msec · SUPPLY VOLTAGE: ±3V to ±6V APPLICATIONS · A/D DRIVERS

文件：608.8 Kbytes 页数：24 Pages

TI

德州仪器

丝印：C52；Package：SOT-23；Dual, 700MHz, Voltage-Feedback OPERATIONAL AMPLIFIER

FEATURES · WIDEBAND BUFFER: 700MHz, G = +1 · WIDEBAND LINE DRIVER: 200MHz, G = +2 · HIGH OUTPUT CURRENT: 140mA · LOW SUPPLY CURRENT: 5.5mA/Ch · ULTRA-SMALL PACKAGE: SOT23-8 · LOW dG/df: 0.05%/0.03° · HIGH SLEW RATE: 335V/msec · SUPPLY VOLTAGE: ±3V to ±6V APPLICATIONS · A/D DRIVERS

文件：608.8 Kbytes 页数：24 Pages

TI

德州仪器

丝印：C5200O；Package：TO-264；NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

文件：238.11 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：C5200R；Package：TO-264；NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

文件：238.11 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：C5242；NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)

Power Amplifier Applications • High Collector breakdown voltage: VCEO= 230 V (min) • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

文件：150.92 Kbytes 页数：2 Pages

TOSHIBA

东芝

丝印：C5242O；Package：TO-3P；NPN Epitaxial Silicon Transistor

文件：475.12 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：C5242R；Package：TO-3P；NPN Epitaxial Silicon Transistor

文件：475.12 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

250 WATTS (AC) DC/D CSINGLE OUTPUT

250 WATTS (AC) DC/DC SINGLE OUTPUT Features • Single Output • 3U x 21(24)TE x 166.5mm(24TE for 5V outputs) • Weight 1.7kg

文件：405.25 Kbytes 页数：1 Pages

POWERBOX