250 WATTS (AC) DC/D CSINGLE OUTPUT

250 WATTS (AC) DC/DC SINGLE OUTPUT Features • Single Output • 3U x 21(24)TE x 166.5mm(24TE for 5V outputs) • Weight 1.7kg

文件：405.25 Kbytes 页数：1 Pages

POWERBOX

5 mm x 15 mm Fast-acting glass tube fuses

文件：288.19 Kbytes 页数：2 Pages

EATON

伊顿

PCB & Small Dimension Fuses

文件：448.93 Kbytes 页数：14 Pages

COOPER

低功耗双端口 SSD

Memblaze 推出能耗大幅优化的 PBlaze5 520 系列 NVMe SSD，典型工作功耗仅 9W，待机功耗更是低至 4W。为企业提供绿色存储选择，以降低机架空间、机房空间、冷却设备投入,大幅降低设备的资本性投入(CAPAX)和运营投入(OPEX)。 • 采用 96 层 3D NAND\n• 随机读（4K）520K IOPS，3.3GB/s 读带宽\n• 可变 Sector Size 管理\n• 支持NVMe-MI接口的带外管理\n• 支持热插拔;

Memblaze

忆恒创源

150 Watt Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recommended for 100W high fidelity audio frequency amplifier output stage

文件：424.28 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SA1943 APPLICATIONS • High current switching • Recommended for 100W high fidelity audio frequency amplifier output stage

文件：229.34 Kbytes 页数：4 Pages

SAVANTIC

High power NPN epitaxial planar bipolar transistor

Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Features ■ High breakdown voltage VCEO > 230V ■ Complementary to 2STA1943 ■ Fast-switching

文件：181.98 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Audio Power Amplifier

Audio Power Amplifier • High Current Capability : IC=13A • High Power Dissipation • Wide S.O.A • Complement to KSA1943

文件：62.8 Kbytes 页数：5 Pages

Fairchild

仙童半导体

THINKI 150 Watt Silicon Epitaxial Planar NPN Power Transistor

DESCRIPTION ·With TO-3PN-SQ package ·Complement to type A1943N APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage

文件：1.28247 Mbytes 页数：4 Pages

THINKISEMI

思祁半导体

SILICON NPN TRIPLE DIFFUSED PLANAR

Silicon NPN Triple Diffused Planar Features • High speed switching tf = 0.2 µsec(typ) • Wide drive current capability

文件：69.05 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

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