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C4D10120E

Silicon Carbide Schottky Diode

Z-REC™RECTIFIERSandZERO-RECOVERY®RECTIFIERS SILICONCARBIDEZ-FET™MOSFET

CreeCree, Inc

科锐

C4D10120E

Silicon Carbide Schottky Diode

FEATURES ·Highsurgecurrentcapability ·PositiveTemperatureCoefficient ·ExtremelyFastSwitching ·Noreverserecovery APPLICATIONS ·Solarinverter ·Powerfactorcorrection ·Switchmodepowersupply

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

C4D10120H

4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode

Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom

WOLFSPEED

WOLFSPEED, INC.

C4D15120A

Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

Z-REC™RECTIFIERSandZERO-RECOVERY®RECTIFIERS SILICONCARBIDEZ-FET™MOSFET

CreeCree, Inc

科锐

C4D15120A

4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode

Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom

WOLFSPEED

WOLFSPEED, INC.

C4D15120D

Marking:C4D15120;Package:TO-247-3;Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features •1.2-KVoltSchottkyRectifier •ZeroReverseRecoveryCurrent •High-FrequencyOperation •Temperature-IndependentSwitchingBehavior •PositiveTemperatureCoefficientonVF Benefits •ReplaceBipolarwithUnipolarRectifiers •EssentiallyNoSwitchingLosses •HigherEfficienc

WOLFSPEED

WOLFSPEED, INC.

C4D15120H

4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode

Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom

WOLFSPEED

WOLFSPEED, INC.

C4D20120A

Silicon Carbide Schottky Diode

Z-REC™RECTIFIERSandZERO-RECOVERY®RECTIFIERS SILICONCARBIDEZ-FET™MOSFET

CreeCree, Inc

科锐

C4D20120A

4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode

Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom

WOLFSPEED

WOLFSPEED, INC.

C4D20120D

CREE Silicon Carbide MOSFET Evaluation Kit

Description: ThisEvaluationkitismeanttodemonstratethehighperformanceofallCREE1200VMOSFETsandCREESchottkydiodes(SBD)instandardTO-247package.ThekitincludestwoCree80mOhm,1200VCREEMOSFETsandtwo1200V20Aschottkydiodes;ahalfbridgeconfiguredevaluationboardthat

CreeCree, Inc

科锐

详细参数

  • 型号:

    C4D

  • 功能描述:

    肖特基二极管与整流器 SIC SCHOTTKY DIODE 1200V, 2A

  • RoHS:

  • 制造商:

    Skyworks Solutions, Inc.

  • 产品:

    Schottky Diodes

  • 峰值反向电压:

    2 V

  • 正向连续电流:

    50 mA

  • 配置:

    Crossover Quad

  • 正向电压下降:

    370 mV

  • 最大功率耗散:

    75 mW

  • 工作温度范围:

    - 65 C to + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOT-143

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
CREE
1546CN
TO-220-2
6000
原厂直销
询价
CREE
17+
TO-220-2
6200
100%原装正品现货
询价
CREE全系列可接受订货
23+
CREE全系列可接受订货
9808
原厂授权代理分销现货只做原装正迈科技样品支持现货
询价
CREE
23+
TO-252
20000
原装正品,假一罚十
询价
CREE
1651+
TO-220AC
8500
只做原装进口,假一罚十
询价
ElectroswitchInc.
41
全新原装 货期两周
询价
CREE
24+
SMD
5500
长期供应原装现货实单可谈
询价
CREESCS220KG
25+23+
TO220-2
19791
绝对原装正品全新进口深圳现货
询价
CREE
18+
TO247
85600
保证进口原装可开17%增值税发票
询价
CreeInc
2018+
TO-247
26976
代理原装现货/特价热卖!
询价
更多C4D供应商 更新时间2025-4-17 16:55:00