4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

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丝印：C4D10120；Package：TO-247-2；Silicon Carbide Schottky Diode Z-Rec Rectifier

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1200 V Discrete Silicon Carbide Schottky Diodes

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Package：TO-247-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：ZRECTM 10A 1200V SIC SCHOTTKY DI

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