丝印：C4D10120；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency • Reduction of Heat Sink

文件：929.91 Kbytes 页数：6 Pages

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丝印：C4D10120；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Lo

文件：887.73 Kbytes 页数：6 Pages

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丝印：C4D10120；Package：TO-247-2；Silicon Carbide Schottky Diode Z-Rec Rectifier

文件：743.52 Kbytes 页数：6 Pages

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丝印：C4D10120；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency • Reduction of Heat Sink

文件：929.91 Kbytes 页数：6 Pages

WOLFSPEED

丝印：C4D10120；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Lo

文件：887.73 Kbytes 页数：6 Pages

WOLFSPEED

丝印：C4D10120；Package：TO-247-2；Silicon Carbide Schottky Diode Z-Rec Rectifier

文件：743.52 Kbytes 页数：6 Pages

Cree

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Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：752.42 Kbytes 页数：6 Pages

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4th Generation 1200 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.17647 Mbytes 页数：9 Pages

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Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：794.57 Kbytes 页数：5 Pages

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Silicon Carbide Schottky Diode

FEATURES · High-Frequency Operation · Positive Temperature Coefficient · Extremely Fast Switching · No reverse recovery APPLICATIONS · AC/DC converters · Power factor correction · Switch mode power supply

文件：311.48 Kbytes 页数：3 Pages

ISC

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