型号：C4D20120D；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2-KVolt Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficienc

文件：884.55 Kbytes 页数：6 Pages

WOLFSPEED

型号：C4D20120H；Package：TO-247-2；Silicon Carbide Schottky Diode Z-Rec Rectifier

文件：679.24 Kbytes 页数：6 Pages

Cree

科锐

型号：C4D20120D；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2-KVolt Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficienc

文件：884.55 Kbytes 页数：6 Pages

WOLFSPEED

型号：C4D20120H；Package：TO-247-2；Silicon Carbide Schottky Diode Z-Rec Rectifier

文件：679.24 Kbytes 页数：6 Pages

Cree

科锐

型号：C4D20120A；Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：662.99 Kbytes 页数：6 Pages

Cree

科锐

型号：C4D20120A；4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.2441 Mbytes 页数：9 Pages

WOLFSPEED

型号：C4D20120D；CREE Silicon Carbide MOSFET Evaluation Kit

Description: This Evaluation kit is meant to demonstrate the high performance of all CREE 1200V MOSFETs and CREE Schottky diodes (SBD) in standard TO-247 package. The kit includes two Cree 80mOhm, 1200V CREE MOSFETs and two 1200V 20A schottky diodes; a half bridge configured evaluation board that

文件：482.43 Kbytes 页数：2 Pages

Cree

科锐

型号：C4D20120D；Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：772.11 Kbytes 页数：6 Pages

Cree

科锐

型号：C4D20120H；4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：485.82 Kbytes 页数：9 Pages

WOLFSPEED