CREE Silicon Carbide MOSFET Evaluation Kit

Description: This Evaluation kit is meant to demonstrate the high performance of all CREE 1200V MOSFETs and CREE Schottky diodes (SBD) in standard TO-247 package. The kit includes two Cree 80mOhm, 1200V CREE MOSFETs and two 1200V 20A schottky diodes; a half bridge configured evaluation board that

文件：482.43 Kbytes 页数：2 Pages

Cree

科锐

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：772.11 Kbytes 页数：6 Pages

Cree

科锐

丝印：C4D20120；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2-KVolt Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficienc

文件：884.55 Kbytes 页数：6 Pages

WOLFSPEED

碳化硅肖特基二极管

低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

GDSICSEMI

广大碳基

Schottky Rectifier

JCWSEMI

嘉灿微

1200 V Discrete Silicon Carbide Schottky Diodes

Wolfspeed(CREE)

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 1200V TO247

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