C4D20120D分立半导体产品的二极管-整流器-阵列规格书PDF中文资料

Description:

This Evaluation kit is meant to demonstrate the high performance of all CREE 1200V MOSFETs and CREE Schottky diodes (SBD) in standard TO-247 package. The kit includes two Cree 80mOhm, 1200V CREE MOSFETs and two 1200V 20A schottky diodes; a half bridge configured evaluation board that includes isolated gate drivers and power supplies and all the other components needed to quickly assemble the half bridge power stage . The basic block diagram and specifications are shown below. The assembly can be easily configured for severa topologies from the basic phase-leg configuration to several other common topologies as shown in the nex section. Additional topologies like H-bridge and 3-phase inverter are possible with two or more of the evaluation kits.

Features:

• Includes all the power stage parts needed to quickly assemble a CREE MOSFET and diode based power converter and get started with SiC devices.

• Easy to use assembly to evaluate CREE MOSFET and Diode performance in a half bridge circuit.

• Easily configurable to different power conversion topologies such as Buck or Boost configurations.

• Easy access to critical test points for measurement including VGS, VDS and IDS.

• Good layout example for properly driving MOSFET and diode with minimal ringing.

• Gate drive schematic and layout reference for a TO-247 packaged CREE MOSFET.

• Comparative testing between CREE devices and IGBTs.