LOW INDUCTANCE CAPACITORS GTO APPLICATIONS

文件：314.83 Kbytes 页数：3 Pages

KEMETKEMET Corporation

基美

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：550.65 Kbytes 页数：5 Pages

CREE

科锐

SiC Schottky Diode

FEATURES · 1200V Schottky Rectifier · High-Frequency Operation · Temperature Independent Switching APPLICATIONS · Free Wheeling Diodes · AC/DC Converters · Switch Mode Power Supplies (SMPS)

文件：374.46 Kbytes 页数：2 Pages

ISC

无锡固电

4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.28006 Mbytes 页数：9 Pages

WOLFSPEED

丝印：C4D02120；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • H

文件：896.36 Kbytes 页数：6 Pages

WOLFSPEED

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：680.15 Kbytes 页数：6 Pages

CREE

科锐

Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Swtitching Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency •

文件：553.08 Kbytes 页数：5 Pages

CREE

科锐

4th Generation 1200 V, 5 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.16566 Mbytes 页数：9 Pages

WOLFSPEED

SiC Schottky Barrier Diode

FEATURES · 1.2kV Schottky Rectifier · Extremely Fast Switching · High-Frequency Operation APPLICATIONS · Switch Mode Power Supplies · Motor Drives · DC-DC Converters

文件：392.07 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：C4D05120；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Lo

文件：925.79 Kbytes 页数：6 Pages

WOLFSPEED