Silicon Carbide Schottky Diode 1.2kV Schottky Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Swtitching Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency •

文件：553.08 Kbytes 页数：5 Pages

Cree

科锐

SiC Schottky Barrier Diode

FEATURES · 1.2kV Schottky Rectifier · Extremely Fast Switching · High-Frequency Operation APPLICATIONS · Switch Mode Power Supplies · Motor Drives · DC-DC Converters

文件：392.07 Kbytes 页数：2 Pages

ISC

无锡固电

4th Generation 1200 V, 5 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.16566 Mbytes 页数：9 Pages

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Silicon Carbide Schottky Diode

文件：680.11 Kbytes 页数：6 Pages

Cree

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碳化硅肖特基二极管

低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

GDSICSEMI

广大碳基

Schottky Rectifier

JCWSEMI

嘉灿微

SiC肖特基二极管

ChipNobo

无边界

Package：TO-220-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 1.2KV 8.2A TO220

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