型号：C4D02120E；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • H

文件：896.36 Kbytes 页数：6 Pages

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型号：C4D02120E；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • H

文件：896.36 Kbytes 页数：6 Pages

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型号：C4D02120A；Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：550.65 Kbytes 页数：5 Pages

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型号：C4D02120A；4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.28006 Mbytes 页数：9 Pages

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型号：C4D02120E；Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：680.15 Kbytes 页数：6 Pages

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型号：C4D02120A_14；Silicon Carbide Schottky Diode

文件：732.57 Kbytes 页数：6 Pages

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型号：C4D02120E_15；Silicon Carbide Schottky Diode

文件：886.89 Kbytes 页数：6 Pages

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