4th Generation 1200 V, 15 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

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丝印：C4D15120；Package：TO-247-2；Silicon Carbide Schottky Diode Z-Rec Rectifier

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Cree

科锐

碳化硅肖特基二极管

低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

GDSICSEMI

广大碳基

Schottky Rectifier

JCWSEMI

嘉灿微

SiC肖特基二极管

ChipNobo

无边界

Package：TO-247-2；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：ZRECTM 15A 1200V SIC SCHOTTKY DI

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