丝印：C3B；Package：SSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

1FEATURES 2• Available in Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 5.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：750.39 Kbytes 页数：22 Pages

TI

德州仪器

丝印：C3B；Package：SSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

1FEATURES 2• Available in Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 5.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：750.39 Kbytes 页数：22 Pages

TI

德州仪器

丝印：C3B；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 39 dB TYP. @ f = 1.0 GHz ISL = 40 dB TYP. @ f = 1.9 GHz ISL = 38 dB TYP. @ f = 2.4 GHz • Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.5 dB TYP. @

文件：418.8 Kbytes 页数：30 Pages

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丝印：C3B；Package：SM8；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

文件：1.03491 Mbytes 页数：20 Pages

TI

德州仪器

丝印：C3B；Package：SM8；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

文件：1.03491 Mbytes 页数：20 Pages

TI

德州仪器

丝印：C3BR；Package：SOT-23；SN74LVC1G132 Single 2-Input NAND Gate With Schmitt-Trigger Inputs

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in Texas Instruments NanoStar™ and NanoFree™ Packages • Supports 5-V

文件：632.18 Kbytes 页数：22 Pages

TI

德州仪器

丝印：C3BR；Package：VSSOP；Dual 2-Input NAND Gate With Schmitt-Trigger Inputs

1FEATURES 2• Available in Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Max tpd of 5.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Typical VOLP (Output Ground Bounce)

文件：750.39 Kbytes 页数：22 Pages

TI

德州仪器

丝印：C3BJ；Package：SOT-23；SN74LVC1G132 Single 2-Input NAND Gate With Schmitt-Trigger Inputs

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in Texas Instruments NanoStar™ and NanoFree™ Packages • Supports 5-V

文件：632.18 Kbytes 页数：22 Pages

TI

德州仪器

丝印：C3BJ；Package：SOT-23；SN74LVC1G132 Single 2-Input NAND Gate With Schmitt-Trigger Inputs

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in Texas Instruments NanoStar™ and NanoFree™ Packages • Supports 5-V

文件：632.18 Kbytes 页数：22 Pages

TI

德州仪器

丝印：C3BJ；Package：SOT-23；SN74LVC1G132 Single 2-Input NAND Gate With Schmitt-Trigger Inputs

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) • Available in Texas Instruments NanoStar™ and NanoFree™ Packages • Supports 5-V

文件：632.18 Kbytes 页数：22 Pages

TI

德州仪器