isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

文件：348.61 Kbytes 页数：2 Pages

ISC

无锡固电

Enhancement mode

N channel Enhancement mode Avalanche-rated

文件：103.99 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated

文件：208.39 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

Infineon

英飞凌