HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide R.B.S.O.A. ■ HIGH VOLTAGE CAP

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STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

ST

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUL312FP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUL series is d

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STMICROELECTRONICS

意法半导体

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max) @ IC= 1A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.

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ISC

无锡固电

IGBT

• Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated

文件：169.39 Kbytes 页数：6 Pages

SIEMENS

西门子