Smart Lowside Power Switch

General Description N channel vertical power FET in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Logic Level Input • Input Protection (ESD) • Thermal shutdown with auto restart • Overload protection • Short circuit protection • Overvoltage protecti

文件：359.77 Kbytes 页数：10 Pages

Infineon

英飞凌

Smart Lowside Power Switch

General Description N channel vertical power FET in Smart SIPMOS® chip on chip technology. Fully protected by embedded protected functions. Features • Logic Level Input • Input Protection (ESD) • Thermal shutdown with latch • Overload protection • Short circuit protection • Overvoltage pro

文件：309.41 Kbytes 页数：10 Pages

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 58A@ TC=25℃ · Drain Source Voltage -VDSS= 50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.018Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch

文件：333.1 Kbytes 页数：2 Pages

ISC

无锡固电

TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

Features ● N channel ● Enhancement mode ● Temperature sensor with thyristor characteristic ● The drain pin is electrically shorted to the tab

文件：327.84 Kbytes 页数：9 Pages

SIEMENS

西门子

TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic)

Features ● N channel ● Enhancement mode ● Temperature sensor with thyristor characteristic ● The drain pin is electrically shorted to the tab

文件：566.25 Kbytes 页数：10 Pages

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Speed TEMPFET(N-Channel Enhancement mode Logic Level Input Potential-free temperature sensor with thyristor characteristics)

N-Channel Enhancement mode Logic Level Input Analog driving possible Fast switching up to 1 MHz Potential-free temperature sensor with thyristor characteristics Overtemperature protection Avalanche rated

文件：274.2 Kbytes 页数：12 Pages

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Speed TEMPFET(N-Channel Enhancement mode Logic Level Input Potential-free temperature sensor with thyristor characteristics)

Speed TEMPFET® • N-Channel • Enhancement mode • Logic Level Input • Analog driving possible • Fast switching up to 1 MHz • Potential-free temperature sensor with thyristor characteristics • Overtemperature protection • Avalanche rated • High current pinning • Green Pr

文件：270.86 Kbytes 页数：12 Pages

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丝印：S3011TE；Package：PG-TO252-5；Smart Low-Side Power Switch

Features • Single channel device • Digital Feedback • Current limitation trigger concept • 3.3 and 5 V compatible logic inputs • Electrostatic discharge protection (ESD) • Green Product (RoHS compliant) • AEC Qualified

文件：2.01443 Mbytes 页数：43 Pages

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Smart Low Side Power Switch

Description The BTS3028SDR is a single channel low-side MOSFET power switch in PG-TO252-3-11 package providing embedded protective functions. The device is monolithically integrated with a N channel vertical power FET and embedded protection functions. The BTS3028SDR is automotive qualified and

文件：1.39693 Mbytes 页数：22 Pages

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丝印：S3050EJ；Package：PG-TDSO8-31；Smart Low-Side Power Switch

Basic Features • Single channel device • Very low output leakage current in OFF state • Electrostatic discharge protection (ESD) • Embedded protection functions (see below) • ELV compliant package • Green Product (RoHS compliant) • AEC Qualified

文件：1.31322 Mbytes 页数：45 Pages

Infineon

英飞凌