Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features ● Load dump and reverse battery protection1) ● Cla

文件：186.45 Kbytes 页数：14 Pages

Infineon

英飞凌

Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown)

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1) • Cla

文件：143.53 Kbytes 页数：13 Pages

SIEMENS

西门子

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features ● Load dump and reverse battery protection1) ● Cla

文件：186.45 Kbytes 页数：14 Pages

Infineon

英飞凌

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features ● Load dump and reverse battery protection1) ● Cla

文件：186.45 Kbytes 页数：14 Pages

Infineon

英飞凌

High-side switch

PROFET Preliminary Data @ High-side switch @ Short-circuit protection ® Overtemperature protection ® Overload protection | @ Load dump protection up to 80 V @® Undervoltage and overvoltage shutdown with auto-restart and hysteresis @ Reverse battery protection @ Input protection @ Induct

文件：149.59 Kbytes 页数：7 Pages

SIEMENS

西门子

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions. Features • Load dump and reverse battery protection1) • Clamp of ne

文件：284.56 Kbytes 页数：14 Pages

Infineon

英飞凌

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions. Features • Load dump and reverse battery protection1) • Clamp of ne

文件：284.56 Kbytes 页数：14 Pages

Infineon

英飞凌

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions. Features • Load dump and reverse battery protection1) • Clamp of ne

文件：284.56 Kbytes 页数：14 Pages

Infineon

英飞凌

High-side switch

PROFET Preliminary Data @ High-side switch @ Short-circuit protection ® Overtemperature protection ® Overload protection | @ Load dump protection up to 80 V @® Undervoltage and overvoltage shutdown with auto-restart and hysteresis @ Reverse battery protection @ Input protection @ Induct

文件：149.59 Kbytes 页数：7 Pages

SIEMENS

西门子

Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation)

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection

文件：142.82 Kbytes 页数：13 Pages

SIEMENS

西门子