Smart High-Side Power Switch Two Channels: 2 x 90m??Status Feedback

Smart High-Side Power Switch Two Channels: 2 x 90mΩ Status Feedback General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. • Providing embedded protecti

文件：240.98 Kbytes 页数：14 Pages

Infineon

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Smart High-Side Power Switch PROFET Two Channels, 140 m 廓

Product Summary The BTS5231-2GS is a dual channel high-side power switch in PG-DSO-14-31 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Basi

文件：840.48 Kbytes 页数：27 Pages

Infineon

英飞凌

Smart High-Side Power Switch

Product Summary The BTS5235-2G is a dual channel high-side power switch in PG-DSO-20-43 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. Basic

文件：487.98 Kbytes 页数：25 Pages

Infineon

英飞凌

Smart High-Side Power Switch PROFET Two Channels, 25 mΩ

Basic Features • Very low standby current • 3.3 V and 5 V compatible logic pins • Improved electromagnetic compatibility (EMC) • Stable behavior at under-voltage • Logic ground independent from load ground • Secure load turn-off while logic ground disconnected • Optimized inverse current ca

文件：293.4 Kbytes 页数：28 Pages

Infineon

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Smart High-Side Power Switch

Overview Product Summary The BTS5242-2L is a dual channel high-side power switch in PG-DSO-12-9 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technolog

文件：509.69 Kbytes 页数：24 Pages

Infineon

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Smart Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Shor

文件：279.82 Kbytes 页数：13 Pages

SIEMENS

西门子

Smart Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features ● Overload protection ● Current limitation ● Shor

文件：277.02 Kbytes 页数：13 Pages

SIEMENS

西门子

Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)

General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions. Features •Overload protection •Current l

文件：151.72 Kbytes 页数：15 Pages

SIEMENS

西门子

Smart Highside High Current Power Switch

General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS® chip on chip technology. Providing embedded protective functions. Features •Overload protection •Current limitation

文件：279.12 Kbytes 页数：15 Pages

Infineon

英飞凌

Smart Highside High Current Power Switch

General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Shor

文件：302.2 Kbytes 页数：16 Pages

Infineon

英飞凌