Smart High-Side Power Switch 1 Channel: 1 x 200m?

General Description N channel vertical power MOSFET with charge pump ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Short-circuit protection • Current limitation • Overload protecti

文件：458.39 Kbytes 页数：19 Pages

Infineon

英飞凌

Smart High-Side Power Switch 1 Channel: 1 x 200m?

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Short circuit protection • Current limitation • Overload protection • Overvol

文件：458.58 Kbytes 页数：19 Pages

Infineon

英飞凌

Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh

文件：150.84 Kbytes 页数：12 Pages

SIEMENS

西门子

Smart Highside Power Switch (Overload protection Current limitation Short circuit protection)

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Features • Overload protection • Current limitation • Sh

文件：163.81 Kbytes 页数：13 Pages

SIEMENS

西门子

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu

文件：327.4 Kbytes 页数：14 Pages

Infineon

英飞凌

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu

文件：327.4 Kbytes 页数：14 Pages

Infineon

英飞凌

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Overload protection • Current limitation • Short circu

文件：327.4 Kbytes 页数：14 Pages

Infineon

英飞凌

Smart High-Side Power Switch One Channel: 60m??Status Feedback

General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. • Providing embedded protective functions Applications • µC compatible high-side power switch with d

文件：240.22 Kbytes 页数：13 Pages

Infineon

英飞凌

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOSâ chip on chip technology. Fully protected by embedded protection functions. Features • Load dump and reverse battery protection1) • Cla

文件：166.77 Kbytes 页数：15 Pages

Infineon

英飞凌

High-side switch

PROFET Preliminary Data @ High-side switch @ Short-circuit protection ® Overtemperature protection ® Overload protection | @ Load dump protection up to 80 V @® Undervoltage and overvoltage shutdown with auto-restart and hysteresis @ Reverse battery protection @ Input protection @ Induct

文件：149.59 Kbytes 页数：7 Pages

SIEMENS

西门子