Smart Lowside Power Switch

General Description N-channel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions. Features • Logic Level Input • Input Protection (ESD) • Thermal shutdown with latch • Overload protection • Short circuit protection

文件：197.6 Kbytes 页数：9 Pages

Infineon

英飞凌

Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection)

General Description N-channel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions. Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvolt

文件：138.87 Kbytes 页数：10 Pages

SIEMENS

西门子

Smart Low Side Power Switch

General Description N-channel vertical power FET in Smart SIPMOS® chip on chip technology. Providing embedded protection functions. Features • Logic Level Input • Input Protection (ESD) • Thermal shutdown with latch • Overload protection • Short circuit protection • Overv

文件：269.45 Kbytes 页数：11 Pages

Infineon

英飞凌

Smart Lowside Power Switch

General Description N channel vertical power FET in Smart SIPMOS® technology. Fully protected by embedded protection functions. Features • Logic Level Input • Input Protection (ESD) • Thermal shutdown with auto restart • Green product (RoHS compliant) • Overload protection

文件：336.46 Kbytes 页数：10 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch

文件：332.93 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 22A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 4.5V DESCRIPTION · Motor drive, DC-DC converter, power switch

文件：332.91 Kbytes 页数：2 Pages

ISC

无锡固电

TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)

Features ● N channel ● Logic level ● Enhancement mode ● Temperature sensor with thyristor characteristic ● The drain pin is electrically shorted to the tab

文件：324.54 Kbytes 页数：9 Pages

SIEMENS

西门子

TEMPFET(N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)

Features ● N channel ● Logic level ● Enhancement mode ● Temperature sensor with thyristor characteristic ● The drain pin is electrically shorted to the tab

文件：563.27 Kbytes 页数：10 Pages

Infineon

英飞凌

TEMPFET(N channel Enhancement mode Temperature sensor with thyristor characteristic)

Features ● N channel ● Enhancement mode ● Temperature sensor with thyristor characteristic ● The drain pin is electrically shorted to the tab

文件：490.14 Kbytes 页数：9 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 27A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.05Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch

文件：332.75 Kbytes 页数：2 Pages

ISC

无锡固电