BSS138PS

LoadSwitch

Features VDS(V)=60V RDS(ON)

BSS138PS

MOSFET

Features RDS(ON)

BSS138PW

60V,320mAN-channelTrenchMOSFET

PHI

BSS138PW

60V,320mAN-channelTrenchMOSFET

1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaverysmall SOT323(SC-70)Surface-MountedDevice(SMD)plasticpackageusing TrenchMOSFETtechnology. 1.2Featuresandbenefits Logic-levelcompatible Veryfastswitching TrenchMOSFETtechnology A

BSS138PW

N-ChannelEnhancementModeMOSFET

Features Lowon-resistance N-ChannelMOSFET Lowinputcapacitance Fastswitchingspeed ESDProtection

BSS138Q

50VN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBSS138Qissuitableforautomotiveapplications requiring

BSS138T

Plastic-EncapsulateMOSFETS

FEATURE HighdensitycelldesignforextremelylowRDS(on) RuggedandRelaible APPLICATION DirectLogic-LevelInterface:TTL/CMOS Drivers:Relays,Solenoids,Lamps,Hammers,Display, Memories,Transistors,etc. BatteryOperatedSystems Solid-StateRelays

BSS138TA

N-CHANNELENHANCEMENTMODEMOSFET

FeaturesandBenefits •BVDSS>50V •RDS(on)≤3.5Ω@VGS=5V •MaximumcontinuousdraincurrentID=200mA •“LeadFree”,RoHSCompliant(Note1) •HalogenandAntimonyFree.GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability

BSS138W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability

BSS138W

SIPMOSSmall-Signal-Transistor

Features •N-channel •Enhancementmode •Logiclevel •dv/dtrated •Pb-freelead-plating;RoHScompliant